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 SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
2N3716
DESCRIPTION
*With TO-3 package
APPLICATIONS
*They are intended for use in power linear and switching applications
PINNING PIN 1 2 3 Base Emitter Collector Fig.1 simplified outline (TO-3) and symbol DESCRIPTION
ABSOLUTE MAXIMUM RATINGS(Ta=25 ) SYMBOL VCBO VCEO VEBO IC IB PD Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Total Power Dissipation Junction temperature Storage temperature TC=25 CONDITIONS Open emitter Open base Open collector VALUE 100 80 7 10 4 150 200 -65~200 UNIT V V V A A W
THERMAL CHARACTERISTICS SYMBOL R(th) jc PARAMETER Thermal resistance junction to case VALUE 1.17 UNIT /W
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER Collector-emitter breakdwon voltage Collector-emitter saturation voltage Base-emitter saturation voltage Base-emitter on voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain DC current gain Transition frequency CONDITIONS IC=0.2A ;IB=0 IC=5A ;IB=0.5A IC=5A ;IB=0.5A IC=3A ; VCE=2V VCE=100V; VBE(off)=1.5V TC=150 VEB=7V; IC=0 IC=1A ; VCE=2V IC=3A ; VCE=2V IC=10A ; VCE=4V IC=0.5A;VCE=10V 50 30 5 4 MIN 80 TYP.
2N3716
SYMBOL V(BR)CEO VCE(sat) VBE(sat) VBE(on) ICEX IEBO hFE-1 hFE-2 hFE-3 fT
MAX
UNIT V
0.8 1.5 1.5 1.0 10.0 5.0 150
V V V mA mA
MHz
2
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
PACKAGE OUTLINE
2N3716
Fig.2 outline dimensions (unindicated tolerance:0.10mm)
3


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